AP1N40MI Datasheet, MOSFET, APM

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AP1N40MI Features and benefits

VDS = 400V ID =1A RDS(ON) < 8500mΩ @ VGS=10V （Type：7200mΩ） Application LED Package Marking and Ordering Information Product ID Pack AP1N40MI SOT23-3L Absolute Maxim.

AP1N40MI Application

, should be limited by total power dissipation. 2 AP1N40MI RVE1.0 Typical Characteristics AP1N40MI 400V N-Channel .

AP1N40MI Description

The AP1N40MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit.

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