AP20G02BDF Datasheet, MOSFET, APM

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AP20G02BDF Features and benefits

VDS = 20V ID =20A RDS(ON) <18mΩ @ VGS=10V （Type：12mΩ） VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-10V（Type：25mΩ） Application BLDC Package Marking and Ordering Infor.

AP20G02BDF Application

, should be limited by total power dissipation. 2 REV1.0 www.icgan.com -2- lin@icgan.com AP20G02BDF 20V N+P-Channe.

AP20G02BDF Description

AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02BDF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection.

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