AP20G03BDF Datasheet, MOSFET, APM

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AP20G03BDF Features and benefits

VDS = 30V ID =20A RDS(ON) <12mΩ @ VGS=4.5V （Type：8.5mΩ） VDS = -20V ID =-18.8A RDS(ON) < 30mΩ @ VGS=-4.5V（Type：25mΩ） Application High Frequency Circuit low-power cons.

AP20G03BDF Application

, should be limited by total power dissipation. 2 AP20G03BDF REV1.0 AP20G03BDF 30V N+P-Channel Enhancement Mode MOS.

AP20G03BDF Description

AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protec.

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