VDS = 100V ID =30A
RDS(ON) < 45mΩ@ VGS=10V (Type:36mΩ)
Application
Automative lighting Load switch Uninterruptible power supply
Package Marking and Ordering Informat.
, should be limited by total power dissipation.
2
AP30H10NF REV1.0
Typical Characteristics
AP30H10NF
100V N-Channe.
AP30H10NF
100V N-Channel Enhancement Mode MOSFET
The AP30H10NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or.
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