VDS = 30V ID =6.8A
RDS(ON) < 28mΩ @ VGS=10V （Type：20mΩ）
VDS = -30V ID =-6.1A
RDS(ON) < 50mΩ @ VGS=-10V（Type：42mΩ）
Application
BLDC
Package Marking and Ordering Informati.
, should be limited by total power dissipation.
2
AP4606B REV1.1
AP4606B
30V N+P-Channel Enhancement Mode MOSFET
P.
The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS.
Image gallery
TAGS
+P-Channel
Download (Size : 1.58MB)