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2N60 - N-CHANNEL MOSFET

Description

The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • RDS(ON) = 3.8Ω@VGS = 10V.
  • Ultra Low gate charge (typical 9.0nC).
  • Low reverse transfer capacitance (Crss = typical 5.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness SYMBOL Pb-free plating product number: 2N60L.

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Datasheet Details

Part number 2N60
Manufacturer ART CHIP
File Size 380.82 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 2N60 Datasheet

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2N60L N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET Description The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.
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