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THN6501 - SiGe NPN Transistor

Description

Base Emitter Collector Available Package Product Package THN6501S SOT-23 THN6501U SOT-323 THN6501Z SOT-343 THN6501E SOT-523 Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.0ⅹ1.25,

Features

  • s o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA THN6501 Series SiGe NPN Transistor SOT-523 Unit in mm.
  • hFE Classification Marking AB1 AB2 hFE 125 to 300 80 to 160.
  • Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Voltage VEBO Emitter to Base Breakdown.

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Datasheet Details

Part number THN6501
Manufacturer AUK
File Size 226.74 KB
Description SiGe NPN Transistor
Datasheet download datasheet THN6501 Datasheet

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Full PDF Text Transcription

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Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.
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