THN6501 transistor equivalent, sige npn transistor.
o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Transition Frequency fT = 9 GHz .
Base Emitter
Collector
□ Available Package
Product
Package
THN6501S SOT-23
THN6501U SOT-323
THN6501Z SOT-343
THN6501E SOT-523
Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.0ⅹ1.25, .
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