MS1642P Key Features
- 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY MON EMITTER CONFIGURATION
- Part: MS1642P
- Manufacturer: Advanced Power Technology
- Size: 103.41 KB
Related Advanced Power Technology Datasheets
| Part Number | Description |
|---|---|
| MS1649 | RF & MICROWAVE TRANSISTORS |
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
| MS1003 | RF & MICROWAVE TRANSISTORS |
| MS1006 | RF AND MICROWAVE TRANSISTORS |
MS1642P Description
The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and puter controlled wirebonding techniques ensure maximum device reliability and consistency. RATINGS (Tcase = 25° C) Symbol PDISS IC(max) T STG VCBO VCEO VEBO Parameter Power Dissipation Device Current Storage Temperature Collector Base...