VHB1-12T transistor equivalent, npn silicon rf power transistor.
*
*
* Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC
O
F
400 mA (MAX) 40 V 20 V 40 V 2.0 V 3.5 W @ TC = 25 .
The ASI VHB1-12T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
*
*
* Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCBO VCEO VCER VEBO PDISS TJ TSTG θ JC
O
F
400 mA (MAX) 40 V 20 V 40 V 2.0 V 3.5 W @ TC = 25 OC -.
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