VHB10-12S transistor equivalent, npn silicon rf power transistor.
*
*
* Omnigold™ Metalization System
B
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 OC to +.
The ASI VHB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
*
*
* Omnigold™ Metalization System
B
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 C -65 OC .
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