VHB1-28T transistor equivalent, npn silicon rf power transistor.
*
*
* Omnigold™ Metalization System
ØD E
F
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
G
H
0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +20.
The ASI VHB1-28T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
*
*
* Omnigold™ Metalization System
ØD E
F
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
G
H
0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C .
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