VHB10-12F transistor equivalent, npn silicon rf power transistor.
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* Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
C D F E H I
2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -.
The ASI VHB10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
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*
* Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
C D F E H I
2.0 A 36 V 18 .
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