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AFC6606W - N&P-Channel MOSFET

Download the AFC6606W datasheet PDF. This datasheet also covers the AFC6606W-Alfa variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC6606W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC6606W
Manufacturer Alfa-MOS
File Size 0.95 MB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6606W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFC6606W 60V N & P Pair Enhancement Mode MOSFET General Description AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) Features N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.