AFC6610W, AFC6610W-Alfa - 100V N&P-Channel MOSFET

Alfa-MOS

Datasheet Details

Part number	AFC6610W, AFC6610W-Alfa
Manufacturer	Alfa-MOS
File Size	819.34 KB
Description	100V N&P-Channel MOSFET
Datasheet	AFC6610W-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFC6610W, AFC6610W-Alfa. Please refer to the document for exact specifications by model.

AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V.
P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23-6L package design.

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Published: Dec 10, 2018 |