AFC6610W datasheet, mosfet equivalent, Alfa-MOS

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AFC6610W Features and benefits

* N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V
* P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V

AFC6610W Application

Pin Description (SOT-23-6L) Features
* N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V .

AFC6610W Description

AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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