AFN2440WS mosfet equivalent, n-channel enhancement mode mosfet.
z 40V/ 9A,RDS(ON)= 20mΩ@VGS=10V z 40V/ 7A,RDS(ON)= 25mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z DC/.
Pin Description ( DFN2X2-6L )
AFN2440WS
40V N-Channel Enhancement Mode MOSFET
Features
z 40V/ 9A,RDS(ON)= 20mΩ@VGS=10V.
Image gallery