30V/2.4A,RDS(ON)=48mΩ@VGS=10V 30V/1.8A,RDS(ON)=58mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management.

Pin Description ( SOT-23 ) AFN3406A 30V N-Channel Enhancement Mode MOSFET Features 30V/2.4A,RDS(ON)=48mΩ@VGS=10V 30V/1.

AFN3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN3406AS

AFN3400A

AFN3400AS

AFN3400S

AFN3402A

AFN3402AS

AFN3404AS

AFN3404S

AFN3410

AFN3414A

AFN3414AS

AFN3416

AFN3416AS