AFN3454 mosfet equivalent, n-channel mosfet.
40V/5.6A,RDS(ON)= 54mΩ@VGS=10V 40V/3.6A,RDS(ON)= 74mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Manageme.
Pin Description ( TSOP-6 )
AFN3454
40V N-Channel Enhancement Mode MOSFET
Features
40V/5.6A,RDS(ON)= 54mΩ@VGS=10V 40V/3.
AFN3480, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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