AFN3460 - N-Channel MOSFET

This page provides the datasheet information for the AFN3460, a member of the AFN3460-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN3460
Manufacturer	Alfa-MOS
File Size	566.01 KB
Description	N-Channel MOSFET
Datasheet	AFN3460 Datasheet
Additional preview pages of the AFN3460 datasheet.

AFN3460, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/5.8A,RDS(ON)=26mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

Other Datasheets by Alfa-MOS

Published: Dec 1, 2018 |