AFN3460 - N-Channel MOSFET
AFN3460 Features
* 20V/5.8A,RDS(ON)=26mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Portable Equipment Battery Powered System Net Working