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AFN3460, AFN3460-Alfa Datasheet - Alfa-MOS

AFN3460 - N-Channel MOSFET

AFN3460, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss

AFN3460 Features

* 20V/5.8A,RDS(ON)=26mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Portable Equipment Battery Powered System Net Working

AFN3460-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN3460, AFN3460-Alfa. Please refer to the document for exact specifications by model.
AFN3460 Datasheet Preview Page 2 AFN3460 Datasheet Preview Page 3

Datasheet Details

Part number:

AFN3460, AFN3460-Alfa

Manufacturer:

Alfa-MOS

File Size:

566.01 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3460, AFN3460-Alfa.
Please refer to the document for exact specifications by model.

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Stock and price

Distributor
Halo Electronics Inc
HFJ11-1081E-L12RL
0 In Stock
Qty : 520 units
Unit Price : $2.56