AFN3460 Datasheet, Alfa-MOS

20V/5.8A,RDS(ON)=26mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.

Pin Description ( TSOP-6 ) AFN3460 20V N-Channel Enhancement Mode MOSFET Features 20V/5.8A,RDS(ON)=26mΩ@VGS=4.5V 20V/4.