AFN3466 mosfet equivalent, n-channel mosfet.
30V/3.6A,RDS(ON)=75mΩ@VGS=10V 30V/2.8A,RDS(ON)=105mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current c.
Pin Description ( TSOP-6 )
AFN3466
30V N-Channel Enhancement Mode MOSFET
Features
30V/3.6A,RDS(ON)=75mΩ@VGS=10V 30V/2..
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