AFN3488W mosfet equivalent, n-channel mosfet.
60V/6.0A,RDS(ON)=36mΩ@VGS=10V 60V/4.2A,RDS(ON)=40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ca.
Pin Description ( TSOP-6 )
AFN3488W
60V N-Channel Enhancement Mode MOSFET
Features
60V/6.0A,RDS(ON)=36mΩ@VGS=10V 60V/4.
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