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AFN4910W - MOSFET

Download the AFN4910W datasheet PDF. This datasheet also covers the AFN4910W-Alfa variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN4910W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4910W
Manufacturer Alfa-MOS
File Size 688.82 KB
Description MOSFET
Datasheet download datasheet AFN4910W Datasheet

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN4910W 40V N1 & N2 Pair Enhancement Mode MOSFET General Description AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) Features N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V Application Car Charger POL, IBC Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.