Alfa-MOS
Technology
AFN4910W
40V N1 & N2 Pair
Enhancement Mode MOSFET
General Description
AFN4910W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Pin Description ( SOP-8P )
Features
N1 Channel
40V/10A,RDS(ON)= 19mΩ@VGS=10V
40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V
N2 Channel
40V/10A,RDS(ON)= 10mΩ@VGS=10V
40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V
Application
Car Charger
POL, IBC
Secondary Side
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4910WS8RG
4910W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4910WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Nov. 2015
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Unit
Tape & Reel
Quantity
2500 EA
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