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Alfa-MOS

AFN4910W Datasheet Preview

AFN4910W Datasheet

N1 & N2 Pair Enhancement Mode MOSFET

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Alfa-MOS
Technology
AFN4910W
40V N1 & N2 Pair
Enhancement Mode MOSFET
General Description
AFN4910W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Pin Description ( SOP-8P )
Features
N1 Channel
40V/10A,RDS(ON)= 19m@VGS=10V
40V/ 8A,RDS(ON)= 25m@VGS=4.5V
N2 Channel
40V/10A,RDS(ON)= 10m@VGS=10V
40V/ 8A,RDS(ON)= 12m@VGS=4.5V
Application
Car Charger
POL, IBC
Secondary Side
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4910WS8RG
4910W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4910WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Nov. 2015
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN4910W Datasheet Preview

AFN4910W Datasheet

N1 & N2 Pair Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN4910W
40V N1 & N2 Pair
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
L = 0.1 mH
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
IS
PD
TJ
TSTG
RθJA
N1 Channel Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Symbol
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ID(on)
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=40V,VGS=0V
VDS=40V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=10A
VGS=4.5V,ID=8A
VDS=15V,ID=5.0A
IS=2A,VGS=0V
VDS=20V,VGS=4.5V
ID= 10A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=2
ID10A,VGEN=10V
RG=1
Typical
N1 N2
40 40
±20 ±20
10 10
88
20 30
10 20
5 10
1.8 1.8
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
mJ
A
W
к
к
к/W
Min. Typ Max. Unit
40 V
1.0 3.0
±100 nA
1
10 uA
20 A
15.8
21.5
19
25
m
25 S
0.85 1.2 V
5 10
1.5 nC
1.5
600
100 pF
45
7 15
9
16
20
30
ns
8 18
©Alfa-MOS Technology Corp.
Rev.A Nov. 2015
www.alfa-mos.com
Page 2



Part Number AFN4910W
Description N1 & N2 Pair Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 9 Pages
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