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AFN4910W - MOSFET

Download the AFN4910W datasheet PDF (AFN4910W-Alfa included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for mosfet.

Description

AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V.

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Note: The manufacturer provides a single datasheet file (AFN4910W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4910W
Manufacturer Alfa-MOS
File Size 688.82 KB
Description MOSFET
Datasheet download datasheet AFN4910W Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology AFN4910W 40V N1 & N2 Pair Enhancement Mode MOSFET General Description AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) Features N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V Application Car Charger POL, IBC Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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