AFN5808W mosfet equivalent, n-channel mosfet.
20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=38mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=50mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.
Pin Description ( DFN2X5-6L )
AFN5808W
20V N-Channel Enhancement Mode MOSFET
Features
20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 2.
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