AFN5800W - N-Channel MOSFET

This page provides the datasheet information for the AFN5800W, a member of the AFN5800W-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN5800W
Manufacturer	Alfa-MOS
File Size	598.67 KB
Description	N-Channel MOSFET
Datasheet	AFN5800W Datasheet
Additional preview pages of the AFN5800W datasheet.

AFN5800W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/8.0A,RDS(ON)=19mΩ@VGS=10V 20V/7.0A,RDS(ON)=20mΩ@VGS=4.5V 20V/6.0A,RDS(ON)=24mΩ@VGS=2.5V 20V/4.5A,RDS(ON)=28mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X5-6L package design.

Other Datasheets by Alfa-MOS

Published: Nov 24, 2018 |