AFN5853AS Datasheet | Alfa-MOS

Description AFN5853AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design Application z POL z DC/DC Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package AFN5853ASFN568RG 5853AS DFN 5X6-8L ※ 5853AS : Parts Code ※ YYMMDD : Date Code ※ AFN5853ASFN568RG : 13”Tape...