AFN5802S Datasheet | Alfa-MOS

Description AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features - ID=20A,RDS(ON)=3.8mΩ@VGS=10V - ID=20A,RDS(ON)=4.8mΩ@VGS= 6V - Super high density cell design for extremely low RDS (ON) - DFN5X6-8L package design Application - Networking / Tele / Server - LED Lighting Applications - Quick Charger Applications - DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN5802SFN568RG 5802S DFN5X6-8L ※ 5802S : Parts Code ※ YYMMDD : Date Code ※ AFN5802SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen- Free Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp. Rev.C May 2024 .alfa-mos. Page 1 Alfa-MOS Technology 80V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source...