AFN5802S - 80V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN5802S, a member of the AFN5802S-Alfa 80V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN5802S
Manufacturer	Alfa-MOS
File Size	813.00 KB
Description	80V N-Channel Enhancement Mode MOSFET
Datasheet	AFN5802S Datasheet
Additional preview pages of the AFN5802S datasheet.

AFN5802S Product details

Description

AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

ID=20A,RDS(ON)=3.8mΩ@VGS=10V.
ID=20A,RDS(ON)=4.8mΩ@VGS= 6V.
Super high density cell design for extremely low RDS (ON).
DFN5X6-8L package design.

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Published: Jan 16, 2025 |