AFN5802S Description
AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L.
AFN5802S Key Features
- ID=20A,RDS(ON)=3.8mΩ@VGS=10V
- ID=20A,RDS(ON)=4.8mΩ@VGS= 6V
- Super high density cell design
- DFN5X6-8L package design
- Networking / Tele / Server
- LED Lighting