AFN5808W - N-Channel MOSFET

This page provides the datasheet information for the AFN5808W, a member of the AFN5808W-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN5808W
Manufacturer	Alfa-MOS
File Size	596.58 KB
Description	N-Channel MOSFET
Datasheet	AFN5808W Datasheet
Additional preview pages of the AFN5808W datasheet.

AFN5808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=38mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=50mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X5-6L package design.

Other Datasheets by Alfa-MOS

Published: Nov 24, 2018 |