AFN5808W Datasheet | Alfa-MOS

Description AFN5808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X5-6L ) 20V N-Channel Enhancement Mode MOSFET Features 20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=38mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=50mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X5-6L package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 S1 G1 G2 S2 S2 Ordering Information Part Ordering No. Part Marking Package AFN5808WFN256RG AFN5808W YYMMDD DFN2X5-6L ϡʳ YY year code ϡʳ MM month...