AFN7106S N-Channel MOSFET
AFN7106S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.
AFN7106S Features
* 20V/20A,RDS(ON)=6.2mΩ@VGS=4.5V 20V/15A,RDS(ON)=8.4mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design
Application
DC-DC Converter POL
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D