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AFN7002ES Datasheet PDF

Alfa-MOS AFN7002ES

N-Channel MOSFET

Part No. AFN7002ES
Datasheet AFN7002ES Download
Manufacturer
Alfa-MOS
Description N-Channel MOSFET
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AFN7002ES datasheet page 1 preview

GENERAL DESCRIPTION

AFN7002ES, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOT-723 ) AFN7002ES 60V N-Channel Enhancement Mode MOSFET

FEATURES

60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.05A , R DS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design–in SOT-723 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D

DESCRIPTION

Gate Source Drain Ordering Information Part Ordering No. Part
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