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AFN7002ES - N-Channel MOSFET

Download the AFN7002ES datasheet PDF. This datasheet also covers the AFN7002ES-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN7002ES, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.05A , R DS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design.
  • in SOT-723 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7002ES-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7002ES
Manufacturer Alfa-MOS
File Size 369.69 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002ES Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN7002AS N-Channel MOSFET
AFN7002DS 60V N-Channel MOSFET
AFN7002KAS N-Channel MOSFET
AFN7002LDS N-Channel MOSFET
AFN7002LKAS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN7002ES, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFN7002ES 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.05A , R DS(ON)=3.0Ω@VGS=4.