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AFN7002ES - N-Channel MOSFET

This page provides the datasheet information for the AFN7002ES, a member of the AFN7002ES-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7002ES, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.05A , R DS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design.
  • in SOT-723 package design.

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Datasheet Details

Part number AFN7002ES
Manufacturer Alfa-MOS
File Size 369.69 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002ES Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7002ES, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFN7002ES 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.05A , R DS(ON)=3.0Ω@VGS=4.
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