AFN7002DS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN7002DS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) 60V N-Channel Enhancement Mode MOSFET Features - 60V/0.5A,RDS(ON)=3000mΩ@VGS=10V - 60V/0.3A,RDS(ON)=4000mΩ@VGS=5V - Low Offset (Error) Voltage - Low-Voltage Operation - High-Speed Circuits - Low Battery Voltage Operation - ESD ( 1KV ) Protected - SOT-363 package design Application -...