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AFN7002DS - 60V N-Channel MOSFET

This page provides the datasheet information for the AFN7002DS, a member of the AFN7002DS-Alfa 60V N-Channel MOSFET family.

Datasheet Summary

Description

AFN7002DS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/0.5A,RDS(ON)=3000mΩ@VGS=10V.
  • 60V/0.3A,RDS(ON)=4000mΩ@VGS=5V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • ESD ( 1KV ) Protected.
  • SOT-363 package design.

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Datasheet preview – AFN7002DS

Datasheet Details

Part number AFN7002DS
Manufacturer Alfa-MOS
File Size 265.77 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet AFN7002DS Datasheet
Additional preview pages of the AFN7002DS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7002DS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN7002DS 60V N-Channel Enhancement Mode MOSFET Features  60V/0.5A,RDS(ON)=3000mΩ@VGS=10V  60V/0.
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