Datasheet4U Logo Datasheet4U.com

AFN7002AS - N-Channel MOSFET

This page provides the datasheet information for the AFN7002AS, a member of the AFN7002AS-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7002AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/0.5A , RDS(ON)=3000mΩ@VGS=10V 60V/0.3A , R DS(ON)=4000mΩ@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 1KV ) Diode design.
  • in SOT-23 package design.

📥 Download Datasheet

Datasheet preview – AFN7002AS

Datasheet Details

Part number AFN7002AS
Manufacturer Alfa-MOS
File Size 396.77 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002AS Datasheet
Additional preview pages of the AFN7002AS datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFN7002AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN7002AS 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=3000mΩ@VGS=10V 60V/0.
Published: |