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AFN7002LDS - N-Channel MOSFET

This page provides the datasheet information for the AFN7002LDS, a member of the AFN7002LDS-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7002LDS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z 60V/0.2A , R DS(ON)=9.0Ω@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD Protection Diode design.
  • in z SOT-363 package design Pin.

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Datasheet Details

Part number AFN7002LDS
Manufacturer Alfa-MOS
File Size 382.61 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002LDS Datasheet
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Alfa-MOS Technology AFN7002LDS 60V N-Channel Enhancement Mode MOSFET General Description AFN7002LDS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z 60V/0.2A , R DS(ON)=9.0Ω@VGS=1.
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