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AFN7002LKAS - N-Channel MOSFET

This page provides the datasheet information for the AFN7002LKAS, a member of the AFN7002LKAS-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7002LKAS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z 60V/0.50A , R DS(ON)=1.6Ω@VGS=10V z 60V/0.40A , R DS(ON)=2.5Ω@VGS=4.5V z 60V/0.05A , R DS(ON)=4.5Ω@VGS=2.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD Protection Diode design.
  • in z SOT-23 package design Pin.

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Datasheet preview – AFN7002LKAS

Datasheet Details

Part number AFN7002LKAS
Manufacturer Alfa-MOS
File Size 373.75 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002LKAS Datasheet
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Alfa-MOS Technology AFN7002LKAS 60V N-Channel Enhancement Mode MOSFET General Description AFN7002LKAS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 60V/0.50A , R DS(ON)=1.6Ω@VGS=10V z 60V/0.40A , R DS(ON)=2.5Ω@VGS=4.5V z 60V/0.05A , R DS(ON)=4.5Ω@VGS=2.
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