* ID=7A,RDS(ON)=115mΩ@VGS=10V
* ID=7A,RDS(ON)=125mΩ@VGS=7.5V
* Super high density cell design for extreSuper high density cell design for extremely low RDS (O.

Pin Description ( DFN5X6-8L ) Features
* ID=7A,RDS(ON)=115mΩ@VGS=10V
* ID=7A,RDS(ON)=125mΩ@VGS=7.5V
* Supe.

AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commer.

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