AFN7002LDS Datasheet, Alfa-MOS

z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z 60V/0.2A , R DS(ON)=9.0Ω@VGS=1.8V z Super high density cell d.

Features z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z .

AFN7002LDS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low i.