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AFN7298AS - 200V Dual N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN7298AS, a member of the AFN7298AS-Alfa 200V Dual N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=7A,RDS(ON)=115mΩ@VGS=10V.
  • ID=7A,RDS(ON)=125mΩ@VGS=7.5V.
  • Super high density cell design for extreSuper high density cell design for extremely low RDS (ON).
  • DFN 5X6-8L package design.

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Datasheet Details

Part number AFN7298AS
Manufacturer Alfa-MOS
File Size 719.19 KB
Description 200V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7298AS Datasheet
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Alfa-MOS Technology AFN7298AS 200V Dual N-Channel Enhancement Mode MOSFET General Description AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  ID=7A,RDS(ON)=115mΩ@VGS=10V  ID=7A,RDS(ON)=125mΩ@VGS=7.5V  Super high density cell design for extreSuper high density cell design for extremely low RDS (ON)  DFN 5X6-8L package design Application  Motor and Load Control  Power Management in White LED System  LCD TV Inverter & AD/DC Inverter Systems.
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