AFN7298AS Datasheet | Alfa-MOS

Description AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features - ID=7A,RDS(ON)=115mΩ@VGS=10V - ID=7A,RDS(ON)=125mΩ@VGS=7.5V - Super high density cell design for extre Super high density cell design for extremely low RDS (ON) - DFN 5X6-8L package design Application - Motor and Load Control - Power Management in White LED System - LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package AFN7298ASFN568RG 7298AS DFN 5X6-8L ※ 7298AS ※ YYMMDD : Parts Code : Date Code ※ AFN7298ASFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen - Free Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp. Rev.A Dec. 2024 .alfa-mos. Page 1 Alfa-MOS Technology 200V Dual N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol...