Alfa-MOS AFN7298AS
200V Dual N-Channel Enhancement Mode MOSFET
| Part No. | AFN7298AS |
|---|---|
| Datasheet | AFN7298AS Download |
| Manufacturer |  Alfa-MOS |
| Description | 200V Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( DFN5X6-8L )FEATURES
● ID=7A,RDS(ON)=115mΩ@VGS=10V● ID=7A,RDS(ON)=125mΩ@VGS=7.5V
● Super high density cell design for extreSuper high density cell design for extremely low RDS (ON)
● DFN 5X6-8L package design Application
● Motor and Load Control
● Power Management in White LED System
● LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1
DESCRIPTION
Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package AFN7298ASFN568RG 7298AS DFN 5X6-8L ※ 7298AS ※ YYMMDD : Parts Code : Date Code ※ AFN7298ASFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen –Free Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp.
