AFN7298AS Description
AFN7298AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L.
AFN7298AS Key Features
- ID=7A,RDS(ON)=115mΩ@VGS=10V
- ID=7A,RDS(ON)=125mΩ@VGS=7.5V
- Super high density cell design for extreSuper
- DFN 5X6-8L package design
- Motor and Load Control
- Power Management in White LED System
- LCD TV Inverter & AD/DC Inverter Systems