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AFN7106S - N-Channel MOSFET

This page provides the datasheet information for the AFN7106S, a member of the AFN7106S-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7106S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/20A,RDS(ON)=6.2mΩ@VGS=4.5V 20V/15A,RDS(ON)=8.4mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design.

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Datasheet preview – AFN7106S

Datasheet Details

Part number AFN7106S
Manufacturer Alfa-MOS
File Size 567.80 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7106S Datasheet
Additional preview pages of the AFN7106S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7106S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7106S 20V N-Channel Enhancement Mode MOSFET Features 20V/20A,RDS(ON)=6.2mΩ@VGS=4.5V 20V/15A,RDS(ON)=8.4mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.
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