AFN7698 Datasheet, Alfa-MOS

100V/6A,RDS(ON)=120mΩ@VGS=10V 100V/6A,RDS(ON)=140mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ca.

Pin Description ( DFN3.3X3.3-8L ) AFN7698 100V N-Channel Enhancement Mode MOSFET Features 100V/6A,RDS(ON)=120mΩ@VGS=10.

AFN7698, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.