AFN7608 Datasheet | Alfa-MOS

Description AFN7608, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) 20V N-Channel Enhancement Mode MOSFET Features 20V/3.9A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=58mΩ@VGS=2.5V 20V/2.0A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFN7608S36RG 08YW SOT-363 ϡʳ 08 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W...