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AFN7698 - N-Channel MOSFET

This page provides the datasheet information for the AFN7698, a member of the AFN7698-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7698, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 100V/6A,RDS(ON)=120mΩ@VGS=10V 100V/6A,RDS(ON)=140mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design.

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Datasheet Details

Part number AFN7698
Manufacturer Alfa-MOS
File Size 589.46 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7698 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7698, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7698 100V N-Channel Enhancement Mode MOSFET Features 100V/6A,RDS(ON)=120mΩ@VGS=10V 100V/6A,RDS(ON)=140mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.
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