AFN7716S, AFN7716S-Alfa Datasheet - Alfa-MOS

AFN7716S 30V N-Channel Enhancement Mode MOSFET

AFN7716S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN7716S Features

* ID=10A,RDS(ON)=15mΩ@VGS=10V

* ID= 7A,RDS(ON)=17mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3.3X3.3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1 2 3

AFN7716S-Alfa-MOS.pdf

AFN7716S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN7716S, AFN7716S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN7716S, AFN7716S-Alfa

Manufacturer:

Alfa-MOS

File Size:

387.36 KB

Description:

30v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN7716S, AFN7716S-Alfa.
Please refer to the document for exact specifications by model.

AFN7716S Distributor

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TAGS

AFN7716S AFN7716S-Alfa 30V N-Channel Enhancement Mode MOSFET Alfa-MOS