AFN7798WS Datasheet | Alfa-MOS

Description AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) 200V N-Channel Enhancement Mode MOSFET Features - ID=1.5A,RDS(ON)=580mΩ@VGS=10V - ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - DFN3.3X3.3-8L package design Application - DC-DC Converter - POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package Unit AFN7798WSFN308RG 7798WS DFN3.3X3.3-8L Tape & Reel ※ YY year code ※ MM month code ※ DD date code ※ AFN7798WSFN308RG : 13”Tape & Reel ; Pb- Free ; Halogen - Free Quantity 5000 EA ©Alfa-MOS Technology Corp. Rev.B Aug. 2023 .alfa-mos. Page 1 Alfa-MOS Technology 200V N-Channel Enhancement Mode...