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AFN7798WS Datasheet 200V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN7798WS datasheet PDF. This datasheet also includes the AFN7798WS-Alfa variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AFN7798WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7798WS
Manufacturer Alfa-MOS
File Size 594.41 KB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7798WS Datasheet

General Description

AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN3.3X3.3-8L ) AFN7798WS 200V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • ID=1.5A,RDS(ON)=580mΩ@VGS=10V.
  • ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

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