Alfa-MOS AFN7798WS
200V N-Channel Enhancement Mode MOSFET
| Part No. | AFN7798WS |
|---|---|
| Datasheet | AFN7798WS Download |
| Manufacturer |  Alfa-MOS |
| Description | 200V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( DFN3.3X3.3-8L ) AFN7798WS 200V N-Channel Enhancement Mode MOSFETFEATURES
● ID=1.5A,RDS(ON)=580mΩ@VGS=10V● ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● DFN3.3X3.3-8L package design Application
● DC-DC Converter
● POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D
DESCRIPTION
Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package Unit AFN7798WSFN308RG 7798WS DFN3.3X3.3-8L Tape & Reel ※ YY year code ※ MM month code ※ DD date code ※ AFN7798WSFN308RG : 13”Tape & Reel ; Pb- Free ; Halogen –Free Quantity 5000 EA ©Alfa-MOS Technology Corp.
