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AFN7798WS - 200V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN7798WS, a member of the AFN7798WS-Alfa 200V N-Channel Enhancement Mode MOSFET family.

Description

AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=1.5A,RDS(ON)=580mΩ@VGS=10V.
  • ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

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Datasheet Details

Part number AFN7798WS
Manufacturer Alfa-MOS
File Size 594.41 KB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7798WS Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7798WS 200V N-Channel Enhancement Mode MOSFET Features  ID=1.5A,RDS(ON)=580mΩ@VGS=10V  ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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