AFN7798WS Overview
AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7798WS 200V N-Channel...
AFN7798WS Key Features
- ID=1.5A,RDS(ON)=580mΩ@VGS=10V
- ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- DFN3.3X3.3-8L package design
- DC-DC Converter