AFN7716S Datasheet | Alfa-MOS

Description AFN7716S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) 30V N-Channel Enhancement Mode MOSFET Features - ID=10A,RDS(ON)=15mΩ@VGS=10V - ID= 7A,RDS(ON)=17mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - DFN3.3X3.3-8L package design Application - DC-DC Converter - POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN7716SFN308RG 7716S DFN3.3X3.3-8L ※ YY year code ※ MM month code ※ DD date code ※ AFN7716SFN308RG : 13”Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.D June 2020 Unit Tape & Reel Quantity 5000 EA .alfa-mos. Page 1 Alfa-MOS Technology 30V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Drain-Source Voltage Gate - Source...