AFN7938AS mosfet equivalent, dual n-channel mosfet.
40V/18A,RDS(ON)=14mΩ@VGS=10V 40V/15A,RDS(ON)=16mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capa.
Pin Description ( DFN5X6-8L )
Features
40V/18A,RDS(ON)=14mΩ@VGS=10V 40V/15A,RDS(ON)=16mΩ@VGS=4.5V Super high density c.
AFN7938AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commerc.
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