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AFN7960AS - Dual N-Channel MOSFET

This page provides the datasheet information for the AFN7960AS, a member of the AFN7960AS-Alfa Dual N-Channel MOSFET family.

Description

AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design.

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Datasheet Details

Part number AFN7960AS
Manufacturer Alfa-MOS
File Size 809.29 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AFN7960AS Datasheet
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Alfa-MOS Technology AFN7960AS 60V Dual N-Channel Enhancement Mode MOSFET General Description AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features 60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design Application Motor and Load Control Power Management in White LED System LCD TV Inverter & AD/DC Inverter Systems.
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