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AFN7960AS Datasheet Dual N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFN7960AS 60V Dual N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( DFN5X6-8L )

Key Features

  • 60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design.

AFN7960AS Distributor