AFN7938AS Datasheet | Alfa-MOS

Description AFN7938AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features 40V/18A,RDS(ON)=14mΩ@VGS=10V 40V/15A,RDS(ON)=16mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN 5X6-8L package design Application POL DC/DC Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package AFN7938ASFN568RG 7938AS DFN 5X6-8L ϡʳ 7 9 3 8 A S : Parts Code ϡʳ YYMMDD : Date Code ϡʳ AFN7938ASFN568RG : 13”Tape &...