AFN7978AS Datasheet | Alfa-MOS

Description AFN7978AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features N1 Channel 40V/10A,RDS(ON)= 20mΩ@VGS=10V 40V/ 8A,RDS(ON)= 27mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)=13mΩ@VGS=10V 40V/ 8A,RDS(ON)=15mΩ@VGS=4.5V Pin Description ( DFN5X6-8L ) Application Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package AFN7978ASFN568RG 7978AS DFN 5X6-8L ϡʳ 7 9 7 8 A S : Parts Code ϡʳ YYMMDD : Date Code ϡʳ AFN7978ASFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen-...