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AFN7960AS - Dual N-Channel MOSFET

Download the AFN7960AS datasheet PDF. This datasheet also covers the AFN7960AS-Alfa variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7960AS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7960AS
Manufacturer Alfa-MOS
File Size 809.29 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AFN7960AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN7960AS 60V Dual N-Channel Enhancement Mode MOSFET General Description AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features 60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design Application Motor and Load Control Power Management in White LED System LCD TV Inverter & AD/DC Inverter Systems.