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AFN7978AS - Dual N-Channel MOSFET

Download the AFN7978AS datasheet PDF. This datasheet also covers the AFN7978AS-Alfa variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN7978AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • N1 Channel 40V/10A,RDS(ON)= 20mΩ@VGS=10V 40V/ 8A,RDS(ON)= 27mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)=13mΩ@VGS=10V 40V/ 8A,RDS(ON)=15mΩ@VGS=4.5V Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7978AS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7978AS
Manufacturer Alfa-MOS
File Size 1.01 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet AFN7978AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN7978AS 40V Dual N-Channel Enhancement Mode MOSFET General Description AFN7978AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features N1 Channel 40V/10A,RDS(ON)= 20mΩ@VGS=10V 40V/ 8A,RDS(ON)= 27mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)=13mΩ@VGS=10V 40V/ 8A,RDS(ON)=15mΩ@VGS=4.