AFN8206WS Datasheet, Alfa-MOS

20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V 20V/2.5A,RDS(ON)=20mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) ESD Protection ( 2K.

Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET Features 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V .

AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.