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AFN8206WS - 20V N-Channel Enhancement Mode MOSFET

Download the AFN8206WS datasheet PDF. This datasheet also covers the AFN8206WS-Alfa variant, as both devices belong to the same 20v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V.
  • ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V.
  • ID=2.5A,RDS(ON)=24mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • ESD Protection ( 2KV ) Diode design.
  • in.
  • DFN2X3-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8206WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8206WS
Manufacturer Alfa-MOS
File Size 467.48 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8206WS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET Features  ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V  ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V  ID=2.5A,RDS(ON)=24mΩ@VGS=1.