AFN8205 Datasheet | Alfa-MOS

Description AFN8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 20V N-Channel Enhancement Mode MOSFET Features - 20V/4.5A,RDS(ON)=29mΩ@VGS=4.5V - 20V/3.2A,RDS(ON)=37mΩ@VGS=2.5V - 20V/2.4A,RDS(ON)=50mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TSOP-6 package design Application - Load Switch - Portable Equipment - Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 D1/D2 S2 G2 D1/D2 G1 Ordering Information Part Ordering No. Part Marking Package AFN8205TS6RG 05YW TSOP-6 ※ 05 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN8205TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.D Sep. 2022 Description Source Drain Source Gate Drain Source Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology...