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AFN8205 - 20V N-Channel MOSFET

Download the AFN8205 datasheet PDF. This datasheet also covers the AFN8205-Alfa variant, as both devices belong to the same 20v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/4.5A,RDS(ON)=29mΩ@VGS=4.5V.
  • 20V/3.2A,RDS(ON)=37mΩ@VGS=2.5V.
  • 20V/2.4A,RDS(ON)=50mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSOP-6 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8205-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8205
Manufacturer Alfa-MOS
File Size 350.61 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet AFN8205 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN8206WS 20V N-Channel Enhancement Mode MOSFET
AFN8028S 80V N-Channel Enhancement Mode MOSFET
AFN8411W 100V N-Channel MOSFET
AFN8412W N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN8205 20V N-Channel Enhancement Mode MOSFET Features  20V/4.5A,RDS(ON)=29mΩ@VGS=4.5V  20V/3.2A,RDS(ON)=37mΩ@VGS=2.5V  20V/2.4A,RDS(ON)=50mΩ@VGS=1.
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